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USER MANUAL MD1822 Microchip
High-Speed 4-Channel MOSFET Driver with Two Inverting and Two Non-Inverting Outputs
Features
• Mixed Inversion MOSFET Driver
• 6 ns Rise and Fall Time
• 2A Peak Output Source-and-Sink Current
• 1.8V to 5V Input CMOS Compatible
• 5V to 10V Total Supply Voltage
- Smart Logic Threshold
- Low-Jitter Design
• Four Matched Channels
• Drives Two P-Channel and Two N-Channel MOSFETs
• Outputs can swing below Ground
- Low-Inductance, Quad-Flat No-Lead Package
• High-Performance, Thermally Enhanced Packaging
Applications
• Medical Ultrasound Imaging
• Piezoelectric Transducer Drivers
• Non-Destructive Testing
• PIN Diode Driver
• CCD Clock Driver/Buffer
• High-Speed Level Translator
General Description
The MD1822 is a high-speed, four-channel MOSFET driver designed to drive high-voltage P-channel and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high-output current for a capacitive load. The high-speed input stage of the MD1822 can operate from a 1.8V to 5V logic interface with an optimum operating input signal range of 1.8V to 3.3V. An adaptive threshold circuit is used to set the level translator switch threshold to the average of the input logic 0 and logic 1 levels. The input logic levels may be ground referenced even though the driver is putting out bipolar signals. The level translator uses a proprietary circuit, which provides DC coupling together with high-speed operation.
The output stage of the MD1822 has separate power connections, enabling the output signal L and H levels to be chosen independently from the supply voltages used for the majority of the circuit. As an example, the input logic levels may be 0V and 1.8V, the control logic may be powered by +5V and -5V, and the output L and H levels may be varied anywhere over the range of -5V to +5V. The output stage is capable of peak currents of up to ±2A, depending on the supply voltages used and load capacitance present. The PE pin serves a dual purpose. First, its logic H level is used to compute the threshold voltage level for the channel input level translators. (See Figure 3-1.) Second, when PE is low, the outputs are disabled, with the A and C outputs high and the B and D outputs low. This assists in properly precharging the AC coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS transistor pair.
Package Type

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16-lead QFN (Top view) 1 See Table 2-1 for pin information.Functional Block Diagrams

flowchart
graph TD
PE["PE"] --> A["AND Gate"]
INA["INA"] --> A
INB["INB"] --> B["AND Gate"]
INC["INC"] --> C["AND Gate"]
IND["IND"] --> D["AND Gate"]
A --> OUTA["OUTA"]
B --> OUTB["OUTB"]
C --> OUTC["OUTC"]
D --> OUTD["OUTD"]
GND["GND"] --> A
GND --> B
GND --> C
GND --> D
VDD["VDD"] --> A
VDD --> B
VDD --> C
VDD --> D
VH["VH"] --> A
VH --> B
VH --> C
VH --> D

flowchart
graph TD
subgraph MD1822
PE["PE"] --> LevelShifter1["Level Shifter"]
INA["INA"] --> LevelShifter2["Level Shifter"]
INB["INB"] --> LevelShifter3["Level Shifter"]
INC["INC"] --> LevelShifter4["Level Shifter"]
IND["IND"] --> LevelShifter5["Level Shifter"]
end
subgraph VDD
VSS["VSS"] --> AND1["AND"]
VDD["VDD"] --> AND2["AND"]
VSS --> INV1["VH"]
VSS --> INV2["VH"]
VSS --> INV3["VH"]
VSS --> INV4["VH"]
VSS --> INV5["VH"]
VSS --> INV6["VH"]
VSS --> INV7["VH"]
VSS --> INV8["VH"]
VSS --> INV9["VH"]
VSS --> INV10["VH"]
VSS --> INV11["VH"]
VSS --> INV12["VH"]
VSS --> INV13["VH"]
VSS --> INV14["VH"]
VSS --> INV15["VH"]
VSS --> INV16["VH"]
VSS --> INV17["VH"]
VSS --> INV18["VH"]
VSS --> INV19["VH"]
VSS --> INV20["VH"]
VSS --> INV21["VH"]
VSS --> INV22["VH"]
VSS --> INV23["VH"]
VSS --> INV24["VH"]
VSS --> INV25["VH"]
VSS --> INV26["VH"]
VSS --> INV27["VH"]
VSS --> INV28["VH"]
VSS --> INV29["VH"]
VSS --> INV30["VH"]
VSS --> INV31["VH"]
VSS --> INV32["VH"]
VSS --> INV33["VH"]
VSS --> INV34["VH"]
VSS --> INV35["VH"]
VSS --> INV36["VH"]
VSS --> INV37["VH"]
VSS --> INV38["VH"]
VSS --> INV39["VH"]
VSS --> INV40["VH"]
VSS --> INV41["VH"]
VSS --> INV42["VH"]
VSS --> INV43["VH"]
VSS --> INV44["VH"]
VSS --> INV45["VH"]
VSS --> INV46["VH"]
VSS --> INV47["VH"]
VSS --> INV48["VH"]
VSS --> INV49["VH"]
VSS --> INV50["VH"]
VSS --> INV51["VH"]
VSS --> INV52["VH"]
VSS --> INV53["VH"]
VSS --> INV54["VH"]
VSS --> INV55["VH"]
VSS --> INV56["VH"]
VSS --> INV57["VH"]
VSS --> INV58["VH"]
VSS --> INV59["VH"]
VSS --> INV60["VH"]
VSS --> INV61["VH"]
VSS --> INV62["VH"]
VSS --> INV63["VH"]
VSS --> INV64["VH"]
VSS --> INV65["VH"]
VSS --> INV66["VH"]
VSS --> INV67["VH"]
VSS --> INV68["VH"]
VSS --> INV69["VH"]
VSS --> INV70["VH"]
VSS --> INV71["VH"]
VSS --> INV72["VH"]
VSS --> INV73["VH"]
VSS --> INV74["VH"]
VSS --> INV75["VH"]
VSS --> INV76["VH"]
VSS --> INV77["VH"]
VSS --> INV78["VH"]
VSS --> INV79["VH"]
VSS --> INV80["VH"]
VSS --> INV81["VH"]
VSS --> INV82["VH"]
VSS --> INV83["VH"]
VSS --> INV84["VH"]
VSS --> INV85["VH"]
VSS --> INV86["VH"]
VSS --> INV87["VH"]
VSS --> INV88["VH"]
VSS --> INV89["VH"]
VSS --> INV90["VH"]
VSS --> INV91["VH"]
VSS --> INV92["VH"]
VSS --> INV93["VH"]
VSS --> INV94["VH"]
VSS --> INV95["VH"]
VSS --> INV96["VH"]
VSS --> INV97["VH"]
VSS --> INV98["VH"]
VSS --> INV99["VH"]
subgraph Inputs
PE
INA
INB
INC
IND
end
subgraph Outputs
VDD
VH
OUTA
OUTB
OUTC
OUTD
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GNG
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNG
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
GNC
Typical Application Circuit

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3.3V CMOS Logic Inputs +3.3V +10V 0.1µF +10V 0.47µF MD1822 PE VDD VH INA OUTA 10nF +100V 0.47µF PIN INB OUTB 10nF -100V 0.47µF NIN DMP INC OUTC GND VSS VL IND OUTD 10nF HVout1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
| Logic Supply Voltage, VDD-VSS | -0.5V to +12.5V |
| Output High Supply Voltage, VH | V-0.5V to VDD+0.5V |
| Output Low Supply Voltage, VL | VSS-0.5V to VH+0.5V |
| Low-Side Supply Voltage, VSS | -6V to +0.5V |
| Logic Input Levels | VSS-0.5V to GND +5.5V |
| Maximum Junction Temperature, TJ | +125°C |
| Operating Ambient Temperature, TA | -20°C to +85°C |
| Storage Temperature, TS | -65°C to +150°C |
| Power Dissipation (Thermal Resistance, θJA=55 °C/W) (Note 2): | |
| 16-lead QFN | 2.2W |
| ESD Rating (Note 1) | ESD Sensitive |
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.
Note 1: Device is ESD sensitive. Handling precautions are recommended.
2: Mounted on a 1 oz. four-layer 3" x 4" PCB
DC ELECTRICAL CHARACTERISTICS
| Electrical Specifications: V_H = V_DD = 10V, V_L = V_SS = GND = 0V, V_PE = 3.3V, T_A = 25°C | ||||||
| Parameter | Sym. | Min. | Typ. | Max. | Unit | Conditions |
| Logic Supply Voltage | V_DD-V_SS | 4.75 | — | 11.5 | V | 4V ≤ V_DD ≤ 11.5V |
| Low-Side Supply Voltage | V_SS | -5.5 | — | 0 | V | |
| Output High Supply Voltage | V_H | V_SS+2 | — | V_DD | V | |
| Output Low Supply Voltage | V_L | V_SS | — | V_DD-4 | V | |
| V_DD Quiescent Current | I_DDQ | — | 60 | μA | No input transitions, PE = 0 | |
| V_H Quiescent Current | I_HQ | — | 2 | — | μA | |
| V_DD Quiescent Current | I_DDQ | — | 1 | — | mA | No input transitions, PE = 1 |
| V_H Quiescent Current | I_HQ | — | 2 | — | μA | |
| V_DD Average Current I | _DD | — | 4 | — | mA | One channel on at 5 MHz, no load |
| V_H Average Current | I_H | — | 10 | — | mA | |
| Input Logic Voltage High | V_IH | V_PE-0.3 | — | V_PE | V | For logic inputs INA, INB, INC, and IND |
| Input Logic Voltage Low | V_IL | 0 | — | 0.3 | V | |
| Input Logic Current High | I_IH | — | — | 1 | μA | |
| Input Logic Current Low | I_L | — | — | 1 | μA | |
| PE Input logic Voltage High | V_IH | 1.7 | 3.3 | 5.25 | V | For logic input PE |
| PE Input Logic Voltage Low | V_IL | 0 | — | 0.3 | V | |
| PE Input Impedance to GND | R_IN\_PE | 100 | — | — | kΩ | |
| Logic Input Capacitance | C_IN | — | 5 | 10 | pF | I_SINK = 50 mA |
| Output Sink Resistance | R_SINK | — | 1.5 | — | Ω | I_SOURCE = 50 mA |
| Output Source Resistance | R_SOURCE | — | 2 | — | Ω | |
| Peak Output Sink Current | I_SINK | — | 2 | — | A | |
| Peak Output Source Current | I_SOURCE | — | 2 | — | A | |
AC ELECTRICAL CHARACTERISTICS
| Electrical Specifications: V_H = V_DD = 10V, V_L = V_SS = GND = 0V, V_PE = 3.3V, T_A = 25°C unless otherwise indicated. | ||||||
| Parameter | Sym. | Min. | Typ. | Max. | Unit | Conditions |
| Input or PE Rise and Fall Time t | irf | — — | 10 ns | Logic input edge speed requirement | ||
| Propagation Delay when Output is from Low to High | t_PLH | — 6.5 | — ns | C_LOAD = 1000 pF (see Timing Diagram), input signal rise/fall time 2 ns | ||
| Propagation Delay when Output is from High to Low | t_PHL | — 6.5 | — ns | |||
| Output Rise Time t | r | — 7 | — | ns | ||
| Output Fall Time | t_f | — 7 | — | ns | ||
| Rise and Fall Time Matching | |t_r - t_f| | — 1 | — | ns | For each channel | |
| Propagation Low to High and High to Low Matching | |t_PLH - t_PHL| | — 1 | — ns | |||
| Propagation Delay Matching | t_dm | — | ±2 | — | ns | Device to device delay match |
| PE On Time | t_PE-ON | — — | 5 | μs | V | _PE = 1.7V - 5.25V, V_DD = 7.5V - 11.5V, -20°C - 85°C |
| PE Off-Time | t_PE-OFF | — — | 4 | μs | ||
TEMPERATURE SPECIFICATIONS
| Parameter | Sym. | Min. | Typ. | Max. | Units | Conditions |
| TEMPERATURE RANGE | ||||||
| Maximum Junction Temperature | T_J | — | — | +125 | °C | |
| Operating Ambient Temperature | T_A | -20 | — | +85 | °C | |
| Storage Temperature | T_S | -65 | — | +150 | °C | |
| PACKAGE THERMAL RESISTANCE | ||||||
| 16-lead QFN | _JA | — 55 | — °C/W | |||
Timing Diagram

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| Signal | Voltage Level | Duration | |--------|---------------|----------| | IN | 3.3V | 50% | | IN | 0V | 50% | | OUT | 10V | 90% | | OUT | 0V | 10% |TABLE 1-1: TRUTH FUNCTION TABLE
| Logic Input Output | ||||
| PE INA INB OUTA OUTB | ||||
| H L H V | H | V_H | ||
| H L L V | H | V_L | ||
| H H H V | L | V_H | ||
| H H L V | L | V_L | ||
| L | X X V | H | V_L | |
| PE | INC | IND | OUTC | OUTD |
| H L H V | H | V_H | ||
| H L L V | H | V_L | ||
| H H H V | L | V_H | ||
| H H L V | L | V_L | ||
| L | X X V | H | V_L | |
2.0 PIN DESCRIPTION
The details on the pins of MD1822 are listed on Table 2-1. See Package Type for the location of pins.
TABLE 2-1: PIN FUNCTION TABLE
| Pin Number | Pin Name Description | |
| 1 INB Logic input | ||
| 2 VDD High-side supply voltage | ||
| 3 VSS | Low-side supply voltage. VSS is also connected to the IC substrate. It is required to connect to the most negative potential of voltage supplies. | |
| 4 INC Logic input | ||
| 5 IND Logic input | ||
| 6 | GND | Logic input ground reference |
| 7 | VL | Supply voltage for N-channel output stage |
| 8 | OUTC | Output driver |
| 9 | OUTD | Output driver |
| 10, 11 | VH | Supply voltage for P-channel output stage |
| 12 | OUTA Output driver | |
| 13 | OUTB Output driver | |
| 14 | VL | Supply voltage for N-channel output stage |
| 15 | PE | Power enable logic input. When PE is high, it sets the input logic threshold. When PE is low, all outputs are at default state (See Table 1-1.) and the IC is in Standby mode. |
| 16 | INA Logic input | |
| Substrate | The IC substrate is internally connected to the thermal pad. The thermal pad and VSS must be connected externally. | |
3.0 APPLICATION INFORMATION
For proper operation of the MD1822, low-inductance bypass capacitors should be used on the various supply pins. The GND pin should be connected to the logic ground. The INA, INB, INC, IND and PE pins should be connected to a logic source with a swing of GND to PE, where PE is from 1.8V to 5V. Good trace practices should be followed corresponding to the desired operating speed. The internal circuitry of the MD1822 is capable of operating up to 100 MHz, with the primary speed limitation being the loading effects of the load capacitance. Because of this speed and the high transient currents that result in capacitive loads, the bypass capacitors should be as close to the chip pins as possible. Unless the load specifically requires bipolar drive, the V_SS and V_L pins should have low-inductance feed-through connections directly to a ground plane. If these voltages are not zero, then they need bypass capacitors in a manner similar to the positive power supplies. The power connection V_DD should have a ceramic bypass capacitor to the ground plane with short leads and decoupling components to prevent resonance in the powerleads.

line
| V_PE | V_TH | |------|------| | 1.0 | 0.5 | | 2.0 | 0.75 | | 3.0 | 1.0 | | 4.0 | 1.25 | | 5.0 | 1.5 | | >5.0 | 2.0 |FIGURE 3-1: VTH/VPE Graph.
MD1822 Delay vs Temperature

line
| Temperature (°C) | Delay Time (ns) for t_PHI | Delay Time (ns) for t_PUI | | ---------------- | ------------------------- | ------------------------- | | -50 | 5.2 | 5.1 | | 0 | 5.4 | 5.3 | | 50 | 6.0 | 5.8 | | 125 | 6.8 | 6.5 |MD1822 t, & t vs Temperature

line
| Temperature (°C) | Time (ns) for t₁ | Time (ns) for t₂ | | ---------------- | ---------------- | ---------------- | | -50 | 6.5 | 6.7 | | 0 | 7.0 | 7.2 | | 50 | 7.5 | 7.7 | | 125 | 7.8 | 7.9 |MD1822 Delay vs V_DD

line
| V_DD Voltage (V) | Delay Time (ns) for t_RH | Delay Time (ns) for t_RH_L | | ---------------- | ------------------------ | -------------------------- | | 5 | 10.0 | 8.5 | | 8 | 5.0 | 4.5 | | 10 | 4.5 | 3.5 | | 12 | 4.0 | 3.0 |MD1822 t_r & t_T vs V_DD

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| V_DD Voltage (V) | Time (ns) - t_r | Time (ns) - t_f | | ---------------- | --------------- | --------------- | | 5 | 8.0 | 9.0 | | 8 | 7.5 | 8.0 | | 10 | 7.0 | 7.0 | | 12 | 6.5 | 6.0 |FIGURE 3-2: Rise/Fall times, propagation delay vs. VDD voltage and Temperature.
The voltages of V_H and V_L decide the output signal levels. These two pins can draw fast transient currents of up to 2A, so they should be provided with an appropriate bypass capacitor located next to the chip pins. A ceramic capacitor of up to 1 F may be appropriate, with a series ferrite bead to prevent resonance in the power supply lead coming to the capacitor. Pay particular attention to minimizing trace lengths, current loop area and using sufficient trace
width to reduce inductance. Surface-mount components are highly recommended. Since the output impedance of this driver is very low, in some cases, it may be desirable to add a small series resistance in series with the output signal to obtain better waveform transitions at the load terminals. This will reduce the output voltage slew rate at the terminals of a capacitive load.
Make sure that parasitic couplings are minimized from the output to the input signal terminals. The parasitic feedback may cause oscillations or spurious waveform shapes on the edges of signal transitions. Since the input operates with signals down to 1.8V, even small coupled voltages may cause problems. The use of a solid ground plane and good power and signal layout practices will prevent this problem. Be careful that a circulating ground return current from a capacitive load cannot react with common inductance to cause noise voltages in the input logic circuitry.
4.0 PACKAGING INFORMATION
4.1 Package Marking Information
16-lead QFN
XXXXX XYWW NNN
Example
182 2815 232
| Legend: XX...X Product Code or Customer-specific informationY Year code (last digit of calendar year)YY Year code (last 2 digits of calendar year)WW Week code (week of January 1 is week '01')NNN Alphanumeric traceability codeePb-free JEDEC® designator for Matte Tin (Sn)* This package is Pb-free. The Pb-free JEDEC designator (e3) can be found on the outer packaging for this package. |
| Note: | In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. |
16-Lead QFN Package Outline (K6)
3.00x3.00mm body, 1.00mm height (max), 0.50mm pitch

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16 D 1 Note 1 (Index Area D/2 x E/2) ETop View

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D2 16 Note 1 (Index Area D/2 x E/2) 1 E2 b View BBottom View

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A A1 θ A3 Seating PlaneSide View

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Note 2 L1 Note 3 LView B
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Notes:
- A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier, an embedded metal marker, or a printed indicator.
- Depending on the method of manufacturing, a maximum of 0.15mm pullback (L1) may be present.
- The inner tip of the lead may be either rounded or square.
| Symbol | A | A1 | A3 | b | D | D2 | E | E2 | e | L | L1 | θ | |
| Dimension (mm) | MIN | 0.80 | 0.00 | 0.20 REF | 0.18 | 2.85* | 1.50 | 2.85* | 1.50 | 0.50 BSC | 0.20^† | 0.00 | 0^ |
| NOM | 0.90 | 0.02 | 0.25 | 3.00 | 1.65 | 3.00 | 1.65 | 0.30^† | - | - | |||
| MAX | 1.00 | 0.05 | 0.30 | 3.15* | 1.80 | 3.15* | 1.80 | 0.45 | 0.15 | 14^ | |||
JEDEC Registration MO-220, Variation VEED-4, Issue K, June 2006
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
NOTES:
APPENDIX A: REVISION HISTORY
Revision A (October 2018)
- Converted Supertex Doc# DSFP-MD1822 to Microchip DS20005706A
- Changed the package marking format
- Changed the quantity of the K6 package from 3000/Reel to 3300/Reel
- Made minor text changes throughout the document
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.

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PART NO. Device XX Package Options - X Environmental - X Media TypeDevice: MD1822 = High-Speed 4-Channel MOSFET Driver
with Two Inverting and Two Non-Inverting Outputs
Package: K6 = 16-lead (3x3) VQFN
Environmental: G = Lead (Pb)-free/RoHS-compliant Package
Media Type: (blank) = 3300/Reel for a K6 Package
Example:
a) MD1822K6-G: High-Speed 4-Channel MOSFET Driver with Two Inverting and Two Non-Inverting Outputs, 16-lead (3x3) VQFN, 3300/Reel
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Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, INICnet, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their respective companies.
© 2018, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-3755-0
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