MCP1631VHV - Electronic component Microchip - Free user manual and instructions

USER MANUAL MCP1631VHV Microchip

High-Speed, Pulse Width Modulator

Features

• Programmable Switching Battery Charger Designs
  • High-Speed Analog PWM Controller (2 MHz Operation)
• Combine with Microcontroller for "Intelligent" Power System Development
  • Peak Current Mode Control (MCP1631)
  • Voltage Mode Control (MCP1631V)
  • High Voltage Options Operate to +16V Input:
• MCP1631HV Current Mode
• MCP1631VHV Voltage Mode
  • Regulated Output Voltage Options:
• +5.0V or +3.3V
• 250 mA maximum current
• External Oscillator Input sets Switching Frequency and Maximum Duty Cycle Limit
• External Reference Input Sets Regulation Voltage or Current
• Error Amplifies V_SNS Amplifier, Current I Battery Voltage V_SNS Amplifier Integrated
• Integrated Overvoltage Comparator
• Integrated High Current Low Side MOSFET Driver (1A Peak)
• Shutdown mode reduces IQ to 2.4 A (typical)
• Internal Overtemperature Protection
• Undervoltage Lockout (UVLO)
• Package Options:
• 4 mm x 4 mm 20-Lead QFN (MCP1631/MCP1631V only)
• 20-Lead TSSOP (All Devices)
• 20-Lead SSOP (All Devices)
  • AEC-Q100 Qualified

Applications

• High Input Voltage Programmable Switching Battery Chargers
• Supports Multiple Chemistries Li-Ion, NiMH, NiCd Intelligent and Pb-Acid
• LED Lighting Applications
- Constant Current SEPIC Power Train Design
- USB Input Programmable Switching Battery Chargers

General Description

MCP1631/MCP1631V is a high-speed analog pulse width modulator (PWM) used to develop intelligent power systems. When combined with a microcontroller, MCP1631/MCP1631V will control the power system duty cycle providing output voltage or current regulation. The microcontroller can be used to adjust output voltage or current, switching frequency and maximum duty cycle while providing additional features making the power system more intelligent, robust and adaptable.

Typical applications for the MCP1631/MCP1631V include programmable switch mode battery chargers capable of charging multiple chemistries, like Li-Ion, NiMH, NiCd and Pb-Acid configured as single or multiple cells. By combining with a small microcontroller, intelligent LED lighting designs and programmable SEPIC topology voltage and current sources can also be developed.

The MCP1631/ MCP1631V inputs were developed to be attached to the I/O pins of a microcontroller for design flexibility. Additional features integrated into the MCP1631HV/MCP1631VHV provide signal conditioning and protection features for battery charger or constant current source applications.

For applications that operate from a high voltage input, the MCP1631HV and MCP1631VHV device options can be used to operate directly from a +3.5V to +16V input. For these applications, an additional low drop out +5V or +3.3V regulated output is available and can provide current up to 250 mA to power a microcontroller and auxiliary circuits.

The MCP1631/MCP1631V is AEC-Q100 qualified for automotive applications.

Package Types

20-Lead SSOP and TSSOP MCP1631HV/MCP1631VHV PGND 1 ○ 20 V_EXT SHDN 2 19 P_VDD OSC_IN 3 18 CS/V_RAMP OSC_DIS 4 17 FB OV_IN 5 16 COMP V_REF 6 15 IS_OUT A_GND 7 14 VS_OUT NC 8 13 IS_IN NC 9 12 VS_IN V_IN 10 11 A_VDD_OUT

20 Lead 4x4 QFN MCP1631/MCP1631V

Typical Application Diagram

Multi-cell, Multi-Chemistry Charger VIN Range +5.5V to +16V L1A Cc SCHOTTKY DIODE COUT R_THERM MCP1631HV VIN VEXT AVDD_OUT CS PVDD PGND OSCIN ISIN ISOUT OVIN NC VSIN FB VREF NC SHDN COMP OSCDIS AGND VSOUT PIC12F683 VDD GP1/C CCP1 GP3 GP4 GP5 GND GP0/C LED R C A_VDD_OUT

Functional Block Diagram ^(1)

MCP1631HV/VHV High Speed PIC PWM

V_IN +3.3V or +5.0V LDO 250 mA A_VDD_OUT / A_VDD_IN V_DD Internal Regulator for MCP1631HV and MCP1631VHV Options Only; For MCP1631 and MCP1631V AV_DD_IN is input Internal 1.2V V_REF V_DD C2 Overvoltage Comp w/ Hysteresis SHDN Shutdown Control A3 Remains On OV_IN OSC_IN V_DD 0.1 μA OSC_DIS 100 kΩ P_VDD OT V_EXT P_GND UVLO S Q Q CS/VR_AMP COMP V_DD V_DD C1 R 10R V_DD R IS_IN FB V_DD - A1 + - 2R - 2.7V Clamp R A_GND A2 + - R IS_OUT V_DD VS_IN Remove for MCP1631V and MCP1631VHV Options

Note 1: For Shutdown control, amplifier A3 remains functional so battery voltage can be sensed during discharge phase.
2: For HV options, internal Low Drop Out Regulator provides +3.3V or +5.0V bias to V_DD .

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings ^()

V_IN – GND (MCP1631/V)....+6.5V

V_IN – GND (MCP1631HV/VHV)....+18.0V

All Other I/O (GND - 0.3V) to (V_DD + 0.3V)

LX to GND....-0.3V to ( V_DD + 0.3V )

V_EXT Output Short Circuit Current .... Continuous

Storage Temperature -65°C to +150°C

Maximum Junction Temperature....-40°C to +150°C

Operating Junction Temperature....-40°C to +125°C

ESD Protection On All Pins:

HBM 4 kV

MM 400V

Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, V_IN = 3.0V to 5.5V , F_OSC = 1MHz with 10% Duty Cycle, C_IN = 0.1μF , V_DD for typical values = 5.0V , T_A for typical values = +25°C , T_A = -40°C to +125°C for all minimum and maximums.
Parameters Sym Min Typ Max Units		Conditions
Input Characteristics
Input Voltage (MCP1631/V)	V_DD	3.0	—	5.5	V	Non-HV Options
Input Voltage (MCP1631HV/VHV)	V_DD	3.5	—	16.0	V	HV Options (Note 2)
Undervoltage Lockout (MCP1631/V)	UVLO	2.7	2.8	3.0	V	V_IN Falling, V_EXT low when input below UVLO threshold
Undervoltage Lockout Hysteresis (MCP1631/MCP1631V)	UVLO_HYS	40	64	100	mV	UVLO Hysteresis
Input Quiescent Current (MCP1631/V, MCP1631HV,VHV)	I(V_IN)	—	3.7	5	mA	= V_DD = _DIS
Shutdown Current I_AVDD for MCP1631/V I_VIN for MCP1631HV/VHV	I_IN\_SHDN	—	2.44.4	1217	A A	= GND = _DIS ,Note: Amplifier A3 remains powered during Shutdown.
OSC_IN , OSC_DIS and Input Levels
Low Level Input Voltage V	IL	—	—	0.8	V	—
High Level Input Voltage	V_IH	2.0	—	—	V	—
Input Leakage Current	I_LEAK		0.005	1	A	—
External Oscillator Range F	OSC	—	—	2	MHz	Maximum operating frequency is dependent upon circuit topology and duty cycle.

Note 1: External Oscillator Input (OSC _IN ) rise and fall times between 10 ns and 10 s were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested.

2: The minimum V_IN must meet two conditions: V_IN ≥ 3.5V and V_IN ≥ (V_OUT(MAX) + V_DROPOUT(MAX)) .

3: TCV_OUT = (V_OUT-HIGH - V_OUT-LOW) * 10^6 / (V_R * Temperature) , V_OUT-HIGH = highest voltage measured over the temperature range . V_OUT-LOW = lowest voltage measured over the temperature range .

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCV_OUT .

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of V_OUT(MAX) + V_DROPOUT(MAX) or 3.5V, whichever is greater.

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, V_IN = 3.0V to 5.5V , F_OSC = 1MHz with 10% Duty Cycle, C_IN = 0.1μF , V_DD for typical values = 5.0V , T_A for typical values = +25°C , T_A = -40°C to +125°C for all minimum and maximums.
Parameters	Sym	Min	Typ	Max	Units	Conditions
Minimum Oscillator High Time Minimum Oscillator Low Time	T_OH\_MIN.T_OL\_MIN.	—	1	0	—	n s —
Oscillator Rise and Fall Time T	_R and T_F	0.01 — 10 μs Note 1
Oscillator Input Capacitance C	OSC	—	5	—	p	f —
External Reference Input
Reference Voltage Input V	REF	0	—	AVDD	V	The reference input is capable of rail-to-rail operation.
Internal Driver)
R_DSON P-channel	R_DSon\_P	—	7.2	15	Ω	—
R_DSON N-channel	R_DSon\_N	—	3.8	15	Ω	—
V_EXT Rise Time	T_RISE	—	2.5	18	ns	C_L = 100 pF Typical for V_IN = 5V (Note 1)
V_EXT Fall Time	T_FALL	—	2.7	18	ns	C_L = 100 pF Typical for V_IN = 5V (Note 1)
Error Amplifier (A1)
Input Offset Voltage	V_OS	-5	-0.6	+5	mV	—
A1 Input Bias Current	I_BIAS	—	0.05	1	μA	—
Error Amplifier PSRR	PSRR	—	85.4	—	dB	V_IN = 3.0V to 5.0V , V_CM = 1.2V
Common Mode Input Range	V_CM	GND – 0.3	—	V_IN	V	—
Common Mode Rejection Ratio		—	90 — dB	V		_IN = 5V , V_CM = 0V to 2.5V
Open-loop Voltage Gain	A_VOL	80	95 — dB	R		_L = 5kΩ to V_IN/2 , 100 mV < V_EAOUT < V_IN - 100 mV , V_CM = 1.2V
Low-level Output	V_OL	—	25	GND + 65	mV	RL = 5 kΩ to V_IN/2
Gain Bandwidth Product	GBWP	—	3.5	—	MHz	V_IN = 5V
Error Amplifier Sink Current	I_SINK	4	12	—	mA	V_IN = 5V , V_REF = 1.2V , V_FB = 1.4V , V_COMP = 2.0V
Error Amplifier Source Current	I_SOURCE	-2	-9.8	—	mA	V_IN = 5V , V_REF = 1.2V , V_FB = 1.0V , V_COMP = 2.0V ,Absolute Value
Current Sense (CS) Amplifier (A2)
Input Offset Voltage	V_OS	-3.0	1.2	+3.0	mV	—
CS Input Bias Current	I_BIAS	—	0.13	1	μA	—
CS Amplifier PSRR	PSRR	—	65	—	dB	V_IN = 3.0V to 5.0V , V_CM = 0.12V ,GAIN = 10
Closed-loop Voltage Gain	A2_VCL	—	1	0	—	_L = V_6 kΩ to V_IN/2 , V_R 100 mV < V_OUT < V_IN - 100 mV , V_CM = +0.12V
Low-level Output	V_OL	5	11	GND + 50	mV	RL = 5 kΩ to V_IN/2
CS Sink Current	I_SINK	5	17.7	—	mA	—

Note 1: External Oscillator Input (OSC IN ) rise and fall times between 10 ns and 10 s were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested.
2: The minimum VIN must meet two conditions: V_IN ≥ 3.5V and V_IN ≥ (V_OUT(MAX) + V_DROPOUT(MAX)) .
3: TCV_OUT = (V_OUT-HIGH - V_OUT-LOW) * 10^6 / (V_R * Temperature) , V_OUT-HIGH = highest voltage measured over the temperature range . V_OUT-LOW = lowest voltage measured over the temperature range .
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCV_OUT .
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of V_OUT(MAX) + V_DROPOUT(MAX) or 3.5V, whichever is greater.

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, V_IN = 3.0V to 5.5V , F_OSC = 1MHz with 10% Duty Cycle, C_IN = 0.1μF , V_DD for typical values = 5.0V , T_A for typical values = +25°C , T_A = -40°C to +125°C for all minimum and maximums.
Parameters	Sym	Min	Typ	Max	Units	Conditions
CS Amplifier Source Current I	SOURCE	-5 -19.5	— mA —
Voltage Sense (VS) Amplifier (A3)
Input Offset Voltage V	OS	-5 0.9 +5 mV —
VS Input Bias Current I	BIAS	—	0	. 0		0 1 1 μ
VS Amplifier PSRR	PSRR	—	65	—	dB	V_IN = 3.0V to 5.0V , V_CM = 1.2V
Common Mode Input Range	V_CM	GND	—	AV_DD	V	Rail to Rail Input
Closed-loop Voltage Gain	A3_VCL	—	1	—	V/V	R_L = 5kΩ to V_IN/2 , 100mV < V_EAOUT < V_IN - 100mV , V_CM = 1.2V
Low-level Output	V_OL	—	38	GND + 85	mV	RL = 5 kΩ to V_IN/2
VS Amplifier Sink Current	I_SINK	1	5	—	mA	—
VS Amplifier Source Current	I_SOURCE	-2	-5	— mA —
Peak Current Sense Input (C1)
Maximum Current Sense Signal MCP1631/MCP1631HV	V_CS\_MAX	0.85 0.9	0.98	V —
Maximum Ramp Signal MCP1631V/MCP1631VHV	V_RAMP	2.7 2.78	2.9	V V		_IN > 4V Maximum CS input range limited by comparator input common mode range. V_CS\_MAX = V_IN - 1.4V
Current Sense Input Bias Current	I_CS\_B	—	-0.1	—	μA	V_IN = 5V
Delay From CS to V_EXT MCP1631	T_CS\_VEXT	—	8.5	25	ns	Note 1
Minimum Duty Cycle	DC_MIN	—	—	0	%	V_FB = V_REF + 0.1V , V_CS = GND
Overvoltage Sense Comparator (C2)
OV Reference Voltage High	OV_VREF\_H	—	1.23	—	V	—
OV Reference Voltage Low	OV_VREF\_L	1.15	1.18 1.23 V —
OV Hysteresis	OV_HYS	—	50	—	mV	Overvoltage Comparator Hysteresis
OV_IN Bias Current	OV_-IBIAS	—	0	. 0		0 1 1 μ
Delay From OV to V_EXT	T_OV\_VEXT	—	63	150	ns	Delay from OV detection to PWM termination (Note 1)
OV Input Capacitance	C_-OV	—	5	—	pF	—
Internal Regulator HV Options Input / Output Characteristics
Input Operating Voltage	V_IN	3.5	—	16.0	V	Note 2
Maximum Output Current	I_OUT\_mA	250	—	— mA —

Note 1: External Oscillator Input (OSC _IN ) rise and fall times between 10 ns and 10 s were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested.

2: The minimum V_IN must meet two conditions: V_IN ≥ 3.5V and V_IN ≥ (V_OUT(MAX) + V_DROPOUT(MAX)) .

3: TCV_OUT = (V_OUT-HIGH - V_OUT-LOW) * 10^6 / (V_R * Temperature) , V_OUT-HIGH = highest voltage measured over the temperature range . V_OUT-LOW = lowest voltage measured over the temperature range .

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCV_OUT .

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of V_OUT(MAX) + V_DROPOUT(MAX) or 3.5V, whichever is greater.

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, V_IN = 3.0V to 5.5V , F_OSC = 1MHz with 10% Duty Cycle, C_IN = 0.1μF , V_DD for typical values = 5.0V , T_A for typical values = +25°C , T_A = -40°C to +125°C for all minimum and maximums.
Parameters	Sym	Min	Typ	Max	Units	Conditions
Output Short Circuit Current I	OUT_SC	— 400 —	mA V			_IN = V_IN(MIN) (Note 2), V_OUT = GND ,Current (average current)measured 10 ms after short is applied.
Output Voltage Regulation V	OUT	V_R-3.0% V	_R±0.4% V	_R+3.0% V	V	_R = 3.3V or 5.0V
V_OUT Temperature Coefficient TCV	OUT	— 50 150 ppm/			°C	Note 3
Line Regulation	ΔV_OUT/(V_OUTXΔV_IN)	-0.3 ±0.1	+0.3	%/V	(V	_OUT(MAX) + V_DROPOUT(MAX) ) ≤ V_IN ≤ 16V Note 2
Load Regulation	ΔV_OUT/V_OUT	-2.5 ±1.0	+2.5	%	I	_L = 1.0 mA to 250 mA , Note 4
Dropout VoltageNote 2, Note 5	V_DROPOUT	— 330	650	mV I		_L = 250 mA , V_R = 5.0V
		— 525	725	mV I		_L = 250 mA , V_R = 3.3V
Output Delay Time	T_DELAY	—	1000	—	μs	V_IN = 0V to 6V , V_OUT = 90% V_R , R_L = 50Ω resistive
Output Noise	e_N	—	8	—	μV/ (Hz)^1/2	I_L = 50 mA , f = 1 kHz, C_OUT = 1 μF
Power Supply Ripple Rejection Ratio	PSRR	—	44	—	dB	f = 100 Hz, C_OUT = 1 μF , I_L = 100 μA , V_INAC = 100 mV pk-pk , C_IN = 0 μF , V_R = 1.2V
Protection Features
Thermal Shutdown	T_SHD	— 150 —	°C	—
Thermal Shutdown Hysteresis	T_SHD\_HYS	—	18	—	°C	—

Note 1: External Oscillator Input (OSC _IN ) rise and fall times between 10 ns and 10 s were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested.

2: The minimum V_IN must meet two conditions: V_IN ≥ 3.5V and V_IN ≥ (V_OUT(MAX) + V_DROPOUT(MAX)) .

3: TCV_OUT = (V_OUT-HIGH - V_OUT-LOW) * 10^6 / (V_R * Temperature) , V_OUT-HIGH = highest voltage measured over the temperature range . V_OUT-LOW = lowest voltage measured over the temperature range .

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCV_OUT .

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of V_OUT(MAX) + V_DROPOUT(MAX) or 3.5V, whichever is greater.

TEMPERATURE SPECIFICATIONS

Electrical Specifications: Unless otherwise indicated, all limits are specified for: V_IN + 3.0V to 5.5V
Parameters Sym Min Typ	Max Units	Conditions
Temperature Ranges
Operating Junction Temperature Range	T_J	-40 —	+125 °C Steady State
Storage Temperature Range T	A	-65 —	+150 °C —
Maximum Junction Temperature	T_J	—	— +150 °C Transient
Package Thermal Resistances
Thermal Resistance, 20L-TSSOP	θ_JA	—	90	— °C/W	Typical	4 Layer board with interconnecting vias
Thermal Resistance, 20L-SSOP	θ_JA	—	89.3	—	°C/W	Typical 4 Layer board with interconnecting vias
Thermal Resistance, 20L-QFN	θ_JA	—	43	— °C/W	Typical	4 Layer board with interconnecting vias

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise noted, V_IN = 3.0V to 5.5V, F_OSC = 1MHz with 10% Duty Cycle, C_IN = 0.1 F , V_IN for typical values = 5.0V, T_A for typical values = +25°C.

FIGURE 2-1: Undervoltage Lockout vs. Temperature.

FIGURE 2-4: Shutdown Current vs. Temperature (MCP1631/MCP1631V).

FIGURE 2-2: Undervoltage Lockout Hysteresis vs. Temperature.

FIGURE 2-5: Oscillator Input Threshold vs. Temperature.

FIGURE 2-3: Input Quiescent Current vs. Temperature.

FIGURE 2-6: Oscillator Disable Input Threshold vs. Temperature.

Typical Performance Curves (Continued)

Note: Unless otherwise noted, V_IN = 3.0V to 5.5V, F_OSC = 1MHz with 10% Duty Cycle, C_IN = 0.1 F , V_IN for typical values = 5.0V, T_A for typical values = +25°C.

FIGURE 2-7: V EXT P-Channel Driver R_DSON vs. Temperature.

FIGURE 2-10: V EXT Fall Time vs. Temperature.

FIGURE 2-8: V EXT N-Channel Driver R_DSON vs. Temperature.

FIGURE 2-11: Amplifier A1 Offset Voltage vs. Temperature.

FIGURE 2-9: V EXT Rise Time vs. Temperature.

FIGURE 2-12: Amplifier A1 Output Voltage Low vs. Temperature.

Typical Performance Curves (Continued)

Note: Unless otherwise noted, V_IN = 3.0V to 5.5V, F_OSC = 1MHz with 10% Duty Cycle, C_IN = 0.1 F , V_IN for typical values = 5.0V, T_A for typical values = +25°C.

FIGURE 2-13: Amplifier A1 Sink Current vs. Temperature.

FIGURE 2-16: Amplifier A2 Output Voltage Low vs. Temperature.

FIGURE 2-14: Amplifier A1 Source Current vs. Temperature.

FIGURE 2-17: Amplifier A2 Sink Current vs. Temperature.

FIGURE 2-15: Amplifier A2 Offset Voltage vs. Temperature.

FIGURE 2-18: Amplifier A2 Source Current vs. Temperature.

Typical Performance Curves (Continued)

Note: Unless otherwise noted, V_IN = 3.0V to 5.5V, F_OSC = 1MHz with 10% Duty Cycle, C_IN = 0.1 F , V_IN for typical values = 5.0V, T_A for typical values = +25°C.

FIGURE 2-19: Amplifier A3 Offset Voltage vs. Temperature.

FIGURE 2-22: Amplifier A3 Source Current vs. Temperature.

FIGURE 2-20: Amplifier A3 Output Voltage Low vs. Temperature.

FIGURE 2-23: MCP1631 and MCP1631HV CS Maximum Voltage (V) vs. Temperature.

FIGURE 2-21: Amplifier A3 Sink Current vs. Temperature.

FIGURE 2-24: MCP1631V and MCP1631VHV V_RAMP Max Voltage (V).

Typical Performance Curves (Continued)

Note: Unless otherwise noted, V_IN = 3.0V to 5.5V, F_OSC = 1MHz with 10% Duty Cycle, C_IN = 0.1 F , V_IN for typical values = 5.0V, T_A for typical values = +25°C.

FIGURE 2-25: Overvoltage Threshold High (V) vs. Temperature.

FIGURE 2-28: Shutdown Input Voltage Threshold (V) vs. Temperature.

FIGURE 2-26: Overvoltage Threshold Low (V) vs. Temperature.

FIGURE 2-29: LDO Quiescent Current vs. Input Voltage.

FIGURE 2-27: Overvoltage Threshold Hysteresis (V) vs. Temperature.

FIGURE 2-30: LDO Quiescent Current vs. Junction Temperature.

Typical Performance Curves (Continued)

Note: Unless otherwise noted, V_IN = 3.0V to 5.5V, F_OSC = 1MHz with 10% Duty Cycle, C_IN = 0.1 F , V_IN for typical values = 5.0V, T_A for typical values = +25°C.

FIGURE 2-31: LDO Output Voltage vs. Load Current.

FIGURE 2-34: LDO Line Regulation vs. Temperature.

FIGURE 2-32: LDO Dropout Voltage vs. Load Current.

FIGURE 2-35: LDO PSRR vs. Frequency.

FIGURE 2-33: LDO Load Regulation vs. Temperature.

FIGURE 2-36: LDO Output Noise vs. Frequency.

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in the table below.

TABLE 3-1: PIN FUNCTION TABLE

MCP1631/MCP1631V		MCP1631HV/MCP1631VHV	Sym Description
TSSOP/SSOP	4x4 QFN	TSSOP/SSOP
1	1	5	1_GND	Power ground return
2	1	6	2	S H D N Shutdown input
3	1	7	3_IN	External oscillator input C
4	1	8	4_DIS	Oscillator disable input C
5	1	9	5_IN	Overvoltage comparator input
6	2	0	6_REF	External voltage reference input
7	1	7	A_GND	Quiet or analog ground
8,9,10 2,4,12 8,9		NC No connection
—	—	10	V_IN	High voltage input
11	3	—	A_VDD\_IN	Analog bias voltage input
—	—	11	A_VDD\_OUT	Regulated V_DD output
1	2	5	1_IN	Voltage sense amplifier (A3) input
1	3	6	1_IN	Current sense Input S
1	4	7	1_OUT	Voltage sense amplifier output
1	5	8	1_OUT	Current sense amplifier output
16	9	16	COMP	Error amplifier (A1) output
17	10	17	FB	Error amplifier inverting input (A1)
18	11	18	CS/V_RAMP	CS - current sense input; V_RAMP voltage ramp input
19	13	19	P_VDD	Power V_DD input
20	14	20	V_EXT	External driver output
—	21	—	EP	Exposed Thermal Pad (EP); must be connected to A_GND

3.1 Power Ground (P GND)

Connect power ground return pin to power ground plane, high peak current flows through the P_GND during the turn on and turn off the external MOSFET devices.

3.2 Shutdown Input (SHDN)

Shutdown input logic low disables device and lowers I_Q to minimum value, amplifier A3 (VS) remains functional for battery voltage sense applications.

3.3 Oscillator Input (OSC IN)

External Oscillator Input, used to set power train switching frequency and maximum duty cycle, V_EXT enabled while low and disabled while high.

3.4 Oscillator Disable (OSC DIS)

Oscillator disable input, used to asynchronously terminate the V_EXT duty cycle. Commonly used to modulate current for LED driver applications. For minimum shutdown I_Q , connect OSC_DIS to SHDN.

3.5 Overvoltage Input (OV IN)

Overvoltage Comparator input, connect to voltage divider, internal comparator terminates V_EXT output in 50 ns to limit output voltage to predetermined value.

3.6 External Reference Voltage Input ( V_REF )

External Voltage Reference input, connect fixed or variable external reference to V_REF , with A1 configured as an error amplifier, the power supply output variable (voltage or current) will follow this input.

3.7 Analog Ground (A GND)

Quiet or analog ground, connect to analog ground plane to minimize noise on sensitive MCP1631 circuitry.

3.8 No Connection (NC)

No connection.

3.9 Input Voltage (V IN)

High voltage input for MCP1631HV/MCP1631VHV devices, operates from 3.5V to 16V input supply.

3.10 Analog supply Input (A VDD\_IN)

Analog bias input, minimum 3.0V to 5.5V operation for MCP1631/MCP1631V devices.

3.11 Analog Supply Output (A VDD\_OUT)

Regulated V_DD output used to power internal MCP1631HV/MCP1631VHV and external microcontroller, supplies up to 250 ma of bias current at 3.3V or 5.0V regulated low drop out rail.

3.12 Voltage Sense Input (VS IN)

Voltage sense amplifier (A3) input, connect to high impedance battery voltage resistor divider to sense battery voltage with minimal loading.

3.13 Current Sense Input (IS IN)

Connect to SEPIC secondary side sense resistor to develop a regulated current source used to charge multi-chemistry batteries.

3.14 Voltage Sense Output (VS OUT)

Voltage sense amplifier output, connect to microcontroller analog to digital converter to measure battery voltage.

3.15 Current Sense Output (IS OUT)

Current sense amplifier output, connect to error amplifier (A1) inverting input (FB) to regulate SEPIC output current.

3.16 Error Amplifier Output (COMP)

Error amplifier (A1) output, connect control loop compensation from FB input to COMP output pin.

3.17 Feedback (FB)

Error amplifier input (A1), connect to current sense output amplifier (A2) to regulate current.

3.18 Current Sense or Voltage Ramp (CS/ V_RAMP )

For MCP1631/MCP1631HV applications, connect to low side current sense of SEPIC switch for current mode control and peak current limit. For MCP1631/MCP1631HV application, connect artificial ramp voltage to V_RAMP input for voltage mode PWM control.

3.19 Power VDD (P VDD)

Power V_DD input, V_EXT gate drive supply input, connect to +5.0V or +3.3V supply for driving external MOSFET.

3.20 External Driver (V EXT)

High current driver output used to drive external MOSFET at high frequency, capable of 1A peak currents with +5.0V P_VDD .

3.21 Exposed PAD 4x4 QFN (EP)

There is an internal electrical connection between the Exposed Thermal Pad (EP) and the A_GND pin; they must be connected to the same potential on the Printed Circuit Board (PCB).

4.0 DETAILED DESCRIPTION

4.1 Device Overview

The MCP1631/MCP1631V device family combines the analog functions to develop high frequency switch mode power systems while integrating features for battery charger and LED current source applications. The integration of a MOSFET driver, voltage sense, current sense and overvoltage protection, make the MCP1631/MCP1631V a highly integrated, high-speed analog pulse width modulator.

The MCP1631/MCP1631V output ( V_EXT ) is used to control the switch of the power system (on and off time). By controlling the switch on and off time, the power system output can be regulated. With the oscillator and reference voltage as inputs, a simple interface to a microcontroller is available with the MCP1631/MCP1631V to develop intelligent power systems. A good example of an intelligent power system is a battery charger, programmable LED driver current source or programmable power supply.

The MCP1631/MCP1631V is a combination of specialty analog blocks consisting of a Pulse Width Modulator (PWM), MOSFET Driver, Current Sense Amplifier (A2), Voltage Sense Amplifier (A3), Overvoltage Comparator (C2) and additional features (Shutdown, Undervoltage Lockout, Overtemperature Protection). For the HV options, an internal low dropout regulator is integrated for operation from high voltage inputs (MCP1631HV/MCP1631VHV).

4.2 Pulse Width Modulator (PWM)

The internal PWM of the MCP1631/MCP1631V is comprised of an error amplifier, high-speed comparator and latch. The output of the amplifier is compared to either the MCP1631 CS (primary current sense input) or the MCP1631V V_RAMP (voltage mode ramp input) of the high speed comparator. When the CS or VRAMP signal reach the level of the error amplifier output, the on cycle is terminated and the external switch is latched off until the beginning of the next cycle (high to low transition of OSC_IN ).

4.3 V EXT MOSFET Driver

The MCP1631/MCP1631V output can be used to drive the external MOSFET directly for low side topology applications. The V_EXT is capable of sourcing up to 700 mA and sinking up to 1A of current from a R_VDD source of 5V. Typical output power using the V_EXT output to directly drive the external MOSFET can exceed 50W depending upon application and switching frequency.

4.4 Current Sense Amplifier (A2)

The A2 current sense amplifier is used to sense current in the secondary side of a SEPIC converter or freewheeling current in a Buck converter. The inverting amplifier has a built in voltage gain of ten with low offset and high speed.

4.5 Voltage Sense Amplifier (A3)

The A3 voltage sense amplifier is used to sense battery voltage. In battery powered applications, it is important to minimize the steady stage load current draw on the battery. The voltage sense amplifier (A3) is used to buffer a high impedance series divider used to reduce the battery pack voltage to a level that can be read using an analog to digital converter. The voltage sense amplifier draws a very low quiescent current and remains functional when the MCP1631/MCP1631V is shutdown making it possible to read battery voltage without turning on the charger.

4.6 Overvoltage Comparator(C2)

The C2 overvoltage comparator is used to prevent the power system from being damaged when the load (battery) is disconnected. By comparing the divided down power train output voltage with a 1.2V internal reference voltage, the MCP1631/MCP1631V V_EXT output switching is interrupted when the output voltage is above a preset value. This limits the output voltage of the power train, the 0V comparator's hysteresis will operate as a ripple regulator.

4.7 Shutdown Input

The MCP1631/MCP1631V shutdown feature is used to disable the device with the exception of the voltage sense amplifier A3 to minimize quiescent current draw. While shutdown, A3 remains operational while the device draws 4.4 A from the input.

4.8 Protection

The MCP1631/MCP1631V has built in Undervoltage Lockout (UVLO) that ensures the output V_EXT pin is forced to a known state (low) when the input voltage or A_VDD is below the specified value. This prevents the main MOSFET switch from being turned on during a power up or down sequence.

The MCP1631/MCP1631V provides a thermal shutdown protection feature, if the internal junction temperature of the device becomes high, the overtemperature protection feature will disable (pull the V_EXT output low) and shut down the power train.

5.0 APPLICATION INFORMATION

5.1 Typical Applications

The MCP1631/MCP1631V can be used to develop intelligent power management solutions, typical applications include a multi-chemistry battery charger used to charge Li-Ion, NiMH or NiCd batteries and constant current LED drivers.

5.2 Battery Charger Design Overview

The design approach for developing high current switching battery chargers using the MCP1631 is described in this section. Depending on input voltage range, there are two versions of the device that can be used to accommodate a very wide range of input voltages.

For a regulated input voltage range of 5V, the MCP1631/MCP1631V device is used; for this input voltage application (regulated AC-DC converter or USB input), the MCP1631/MCP1631V is powered directly from the 5V DC input.

For input voltages to +16V steady state with +18V transients, the MCP1631HV/MCP1631VHV, or high voltage option can be used. The high voltage devices integrate a low dropout (LDO) linear regulator with a set output voltage of +3.3V or +5.0V that internally powers the MCP1631HV/MCP1631VHV and is also capable of providing 250 mA of bias current for the attached microcontroller and other circuitry. MCP1631HV/MCP1631VHV internal power dissipation must be considered when loading the internal LDO regulator.

For higher input voltages the MCP1631/MCP1631V can be biased from an external regulated +3.0V to +5.5V supply.

5.3 Programmable Single Ended Primary Inductive (SEPIC) Current Source

The MCP1631/MCP1631V family integrates features that are necessary to develop programmable current sources. The SEPIC converter is commonly used in battery charger applications. The primary or input inductor is used to filter input current and minimize the switching noise at the converter input. The primary to secondary capacitive isolation blocks any dc path from input to output making the SEPIC safer than Buck or other non-isolated topologies. The SEPIC rectifier blocks the reverse path preventing battery leakage, in other topologies an additional diode for blocking is necessary adding additional components and efficiency loss.

The input or primary inductor and output or secondary inductor are typically constructed from a single magnetic device with two windings, this is commonly referred to as a coupled inductor. Using coupled inductors has significant advantages in addition to the size and cost benefits of a single core with multiple windings.

5.4 Mixed Signal Design

For intelligent battery charger design, a microcontroller is used to generate the proper charge profile, charge termination, safety timers and battery charger features. When using the MCP1631/MCP1631V for Li-Ion battery charger applications, the microcontroller is also used to generate the constant voltage regulation phase of the charge cycle. This is accomplished by using the external reference feature of the MCP1631/MCP1631V as a programmable current source. The microcontroller is used to varKEF input of the MCP1631/MCP1631V. The charge current into the battery is regulated by the MCP1631/MCP1631V, the level that it is regulated to is set by the programmability of the microcontroller.

The internal MCP1631/MCP1631V analog components are used to regulate the microcontroller programmed current. The secondary or battery current is sensed using amplifier A2, the output of A2 is feed into the input of the error amplifier A1, the output of A1 sets the peak switch current of the SEPIC converter, it increases or decreases the battery current to match its (A1) inputs. By increasing the V_REF or non-inverting input of A1, the battery current is increased.

5.5 Safety Features

The MCP1631/MCP1631V integrates a high-speed comparator used to protect the charger and battery from being exposed to high voltages if the battery is removed or opens. Comparator C2 is used to sense the SEPIC output voltage. If the divided down output voltage becomes higher than the 1.2V internal MCP1631/MCP1631V reference, the V_EXT PWM output is terminated within 50 ns preventing the build up of voltage on the SEPIC output.

Peak switch current is limited by the MCP1631/MCP1631V comparator C1 and error amplifier A1 output voltage clamp. For the MCP1631, the error amplifier output is clamped at 2.7V. The A1 output is divided down by 1/3 and compared with CS (current sense) input. The V_EXT output is turned off if the CS input reaches a level of 1/3 of 2.7V or 0.9V in 12 ns, preventing the external switch current from becoming high enough to damage the SEPIC power train.

Internal overtemperature protection limits the device junction temperature to 150^ C preventing catastrophic failure for overtemperature conditions. Once the temperature decreases 10^ C, the device will resume normal operation.

Safety timers are typically used to limit the amount of energy into a faulted battery or pack. This is accomplished using the microcontroller and MCP1631/MCP1631V shutdown feature.

5.6 OSC Disable Feature

The oscillator disable or OSC_DIS input is used to asynchronously terminate the PWM V_EXT output. This can be used with a slow PWM input to modulate current into an LED for lighting applications.

Multi-cell Multi-Chemistry Charger VIN Range +4.5V to +5.5V MCP1631 NC VEXT AVDD_IN CS RVDD PGND OSCIN ISIN ISOUT OVIN NC VSIN FB VREF NC SHDN COMP OSCDIS AGND VSOUT PIC12F683 VDD GP1/C CCP1 GP3 GP4 GP5 GND GP0/C L1A Cc L1B SCHOTTKY DIODE COUT R THERM R C AVDD_OUT

FIGURE 5-1: +5V AC-DC or USB Input Application.

Multi-cell Multi-Chemistry Charger VIN Range +5.5V to +16V L1A CC SCHOTTKY DIODE COUT R_THERM CIN L1B MCP1631HV VIN VEXT AVDD_OUT CS PVDD PGND OSCIN ISIN ISOUT OVIN NC VSIN FB VREF NC SHDN COMP OSCDIS AGND VSOUT PIC12F683 VDD GP1/C CCP1 GP3 GP4 GP5 GND GP0/C R C A_VDD_OUT LED

FIGURE 5-2: +5.5V to +16.0V Input.

Multi-cell Multi-Chemistry Charger VIN Range +6V to +40V +5V HV CIN L1A Cc SCHOTTKY DIODE Rtherm Regulator COUT L1B COUT MCP1631 NC VEXT AVDD_IN CS PVDD PGND OSCIN ISIN ISOUT OVIN NC VSIN FB VREF NC SHDN COMP OSCDIS AGND VSOUT PIC12F683 VDD GP1/C CCP1 GP3 GP4 GP5 GND GP0/C R C AVDD_OUT LED

FIGURE 5-3: Wide Range High Voltage Input.

6.0 PACKAGING INFORMATION

6.1 Package Marking Information (Not to Scale)

20-Lead 4x4 QFN (MCP1631/MCP1631V)

PIN 1 XXXXXX XXXXXX XXXXXX YWWNNN

20-Lead SSOP (All Devices)

XXXXXXXXXX XXXXXXXXXX YYWWNNN

20-Lead TSSOP (All Devices)

XXXXXXXX XXXXXXXXNNN ○ YYWW

Example:

PIN 1 1631 E/ML®63 2217 256

Example:

1631VHV500 ESS®3 2218256

Example:

1631VHV3 EST256 ○2219

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week '01')

NNN Alphanumeric traceability code

e3 Pb-free JEDEC designator for Matte Tin (Sn)

This package is Pb-free. The Pb-free JEDEC designator (e3)

can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.

20-Lead Plastic Quad Flat, No Lead Package (G4) - 4x4 mm Body [QFN] Also called VQFN

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

Microchip Technology Drawing C04-126-G4 Rev D Sheet 1 of 2

20-Lead Plastic Quad Flat, No Lead Package (G4) - 4x4 mm Body [QFN] Also called VQFN

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

Technical line drawing of two integrated circuit chips with pinouts (no text or symbols)

Units		MILLIMETERS
Dimension Limits		MIN	NOM	MAX
Number of Terminals	N	20
Pitch	e	0.50 BSC
Overall Height	A	0.80	0.90	1.00
Standoff	A1	0.00	0.02	0.05
Terminal Thickness	A3	0.20 REF
Overall Length	D	4.00 BSC
Exposed Pad Length	D2 2	60	2.70 2.80
Overall Width	E	4.00 BSC
Exposed Pad Width	E2	2.60	2.70	2.80
Terminal Width	b	0.18	0.25	0.30
Terminal Length	L	0.30	0.40	0.50
Terminal-to-Exposed-Pad	K		-

0.20 -

Notes:

1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package is saw singulated
3. Dimensioning and tolerancing per ASME Y14.5M

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

REF: Reference Dimension, usually without tolerance, for information purposes only.

Microchip Technology Drawing C04-126-G4 Rev D Sheet 2 of 2

20-Lead Plastic Quad Flat, No Lead Package (G4) - 4x4 mm Body [QFN] Also called VQFN

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

C1 X2 20 EV ØV 1 2 C2 Y2 EV G1 Y1 X1 SILK SCREEN E

RECOMMENDED LAND PATTERN

Units		MILLIMETERS
Dimension Limits		MIN	NOM	MAX
Contact Pitch	E	0.50 BSC
Optional Center Pad Width	X2			2.80
Optional Center Pad Length	Y2			2.80
	C1Contact Pad Spacing 4.00
Contact Pad Spacing	C2		4.00
Contact Pad Width (X20)	X1			0.30
Contact Pad Length (X20)	Y1			0.80
Contact Pad to Center Pad (X16) G1	0.20
Thermal Via Diameter V			0.30
Thermal Via Pitch EV			1.00

Notes:

1. Dimensioning and tolerancing per ASME Y14.5M

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

1. For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during reflow process

Microchip Technology Drawing C04-2126-G4 Rev D

20-Lead Plastic Shrink Small Outline (SS) - 5.30 mm Body [SSOP]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

Microchip Technology Drawing C04-072 Rev C Sheet 1 of 2

20-Lead Plastic Shrink Small Outline (SS) - 5.30 mm Body [SSOP]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

Isometric line drawing of an integrated circuit chip with multiple pins (no text or symbols)

Units		MILLIMETERS
Dimension Limits		MIN	NOM	MAX
		20NNumber of Pins
Pitch	e	0.65 BSC
				2.00--AOverall Height
				1.851.751.65A2Molded
				--0.05A1Standoff
				8.207.807.40EOverall V
				5.605.305.00E1Molded
				7.507.206.90DOverall L
				0.950.750.55LFoot Len
Footprint	L1	1.25 REF
Lead Thickness	c			0.25-0.09
Foot Angle	φ			8°4°0°
Lead Width	b			0.38-0.22

Notes:

1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.20mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

REF: Reference Dimension, usually without tolerance, for information purposes only.

Microchip Technology Drawing C04-072 Rev C Sheet 2 of 2

20-Lead Plastic Shrink Small Outline (SS) - 5.30 mm Body [SSOP]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

20 G1 C SILK SCREEN 1 2 Y1 E X1

RECOMMENDED LAND PATTERN

Units		MILLIMETERS
Dimension Limits		MIN	NOM	MAX
Contact Pitch	E	0.65 BSC
	CContact Pad Spacing 7.00
Contact Pad Width (X20)	X1			0.45
Contact Pad Length (X20)	Y1			1.85
Contact Pad to Center Pad (X18)	G1 0.20

Notes:

1. Dimensioning and tolerancing per ASME Y14.5M

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

1. For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during reflow process

Microchip Technology Drawing C04-2072 Rev C

20-Lead Plastic Thin Shrink Small Outline (ST) - 4.4 mm Body [TSSOP]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

D A N e E/2 (E1) E A (A) (DATUM B) (DATUM A) NOTE 1 1 2 e/2 20X 0.20 C B A TOP VIEW

0.05 SEATING PLANE C 0.10 C NX b A2 A A1 SIDE VIEW DETAIL B SHEET 2 VIEW A—A

Microchip Technology Drawing C04-088C Sheet 1 of 2

20-Lead Plastic Thin Shrink Small Outline (ST) - 4.4 mm Body [TSSOP]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

H R1 R2 c L (L1) θ

DETAIL B

Units		MILLIMETERS
Dimension Limits		MIN	NOM	MAX
Number of Pins	N	20
Pitch	e	0.65 BSC
Overall Height	A	-	-	1.20
Molded Package Thickness	A2	0.80	1.00	1.05
Standoff	A1	0.05	-	0.15
Overall Width	E	6.40 BSC
Molded Package Width	E1	4.30	4.40	4.50
Molded Package Length	D	6.40	6.50	6.60
Foot Length	L	0.45	0.60	0.75
Footprint	L1	1.00 REF
Foot Angle	θ	0°	-	8°
Lead Width	b	0.19	-	0.30
Lead Thickness	c	0.09	-	0.20
Bend Radius	R1	0.09	-	-
Bend Radius	R2	0.09	-	-

Notes:

1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only.

Microchip Technology Drawing C04-088C Sheet 2 of 2

20-Lead Plastic Thin Shrink Small Outline (ST) - 4.4 mm Body [TSSOP]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

SILK SCREEN C Y1 G X1 E

RECOMMENDED LAND PATTERN

Units		MILLIMETERS
Dimension Limits		MIN	NOM	MAX
Contact Pitch	E	0.65 BSC
Contact Pad Spacing	C		5.90
Contact Pad Width (X20)	X1			0.45
Contact Pad Length (X20)	Y1			1.45
Distance Between Pads	G	0.20

Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-2088A

APPENDIX A: REVISION HISTORY

Revision C (July 2022)

• Minor layout changes.
• Added automotive qualification to Features, General Description and Product Identification System.
• Updated Section 6.0 "Packaging Information"

Revision B (October 2008)

• Section 2.0 "Typical Performance Curves", Input Offset Voltage: changed minimum, typical, maximum from -0.6, -, +0.6 to -5, -0.6, +5, respectively;
• Updated Section 6.0 "Packaging Information";
• Updated the Product Identification System.

Revision A (October 2007)

• Original Release of this Document.

NOTES:

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.	[T]^(1)	- [XXX]	X	/XX	XXX
Device Tape and Reel Voltage Options Temperature Range
Device MCP1631: High-Speed PWMMCP1631HV: High-Speed PWMMCP1631V: High-Speed PWMMCP1631VHV: High-Speed PWM
Tape and Reel (Blank) = Standard packaging (tube or tray)Option: T = Tape and Reel ^(1)
Voltage options (HV parts only): 330 = 3.3V500 = 5.0V
Temperature Range: E = -40°C to +125°C
Package: ML = Plastic Quad Flat, No Lead (4x4x0.9), 20-leadSS = Plastic Shrink Small Outline (5.30 mm), 20-leadST = Plastic Thin Shrink Small Outline (4.4 mm), 20-Lead* All package offerings are Pb Free (Lead Free)
Qualification: (Blank) = Standard PartVAO = Automotive AEC-Q100 Qualified

Examples:

a) MCP1631-E/ML: High-Speed PWM,
20LD QFN package.
b) MCP1631T-E/SS: Tape and Reel, High-Speed PWM, 20LD SSOP package.
c) MCP1631HV-330E/SS: High Speed PWM, Current Mode Control, 3.3V Internal Regulator, 20LD SSOP Package.
d) MCP1631HV-500E/ST: High Speed PWM, Current Mode Control, 5.0V Internal Regulator, 20LD TSSOP Package.
e) MCP1631V-E/ML: High-Speed PWM, 20LD QFN package.
f) MCP1631VT-E/SS: Tape and Reel, High-Speed PWM, 20LD SSOP package.
g) MCP1631VHV-500E/SS: High Speed PWM, Voltage Mode Control, 5.0V Internal Regulator, 20LD SSOP Package.
h) MCP1631VHV-330E/ST: High Speed PWM, Voltage Mode Control, 3.3V Internal Regulator, 20LD TSSOP Package.
i) MCP1631T-E/MLVAO: Tape and Reel, High-Speed PWM, Tape and Reel, 20LD QFN package, Automotive AEQ-Q100 Qualified. j) MCP1631T-E/STVAO: Tape and Reel, High-Speed PWM, 20LD TSSOP package, Automotive AEQ-Q100 Qualified.

Note 1: Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option.

NOTES:

Note the following details of the code protection feature on Microchip products:

• Microchip products meet the specifications contained in their particular Microchip Data Sheet.
- Microchip believes that its family of products is secure when used in the intended manner, within operating specifications, and under normal conditions.
- Microchip values and aggressively protects its intellectual property rights. Attempts to breach the code protection features of Microchip product is strictly prohibited and may violate the Digital Millennium Copyright Act.
- Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not mean that we are guaranteeing the product is "unbreakable" Code protection is constantly evolving. Microchip is committed to continuously improving the code protection features of our products.

This publication and the information herein may be used only with Microchip products, including to design, test, and integrate Microchip products with your application. Use of this information in any other manner violates these terms. Information regarding device applications is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. Contact your local Microchip sales office for additional support or, obtain additional support at https://www.microchip.com/en-us/support/design-help/client-support-services.

THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS". MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF NON-INFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A PARTICULAR PURPOSE, OR WARRANTIES RELATED TO ITS CONDITION, QUALITY, OR PERFORMANCE.

IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL, OR CONSEQUENTIAL LOSS, DAMAGE, COST, OR EXPENSE OF ANY KIND WHATSOEVER RELATED TO THE INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROCHIP'S TOTAL LIABILITY ON ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, THAT YOU HAVE PAID DIRECTLY TO MICROCHIP FOR THE INFORMATION.

Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated.

Trademarks

The Microchip name and logo, the Microchip logo, Adaptec, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, CryptoMemory, CryptoRF, dsPIC, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

AgileSwitch, APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, Flashtec, Hyper Speed Control, HyperLight Load, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet-Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider, TrueTime, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A.

Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky, BodyCom, Clockstudio, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, Espresso T1S, EtherGREEN, GridTime, IdealBridge, In-Circuit Serial Programming, ICSP, INICnet, Intelligent Paralleling, IntelliMOS, Inter-Chip Connectivity, JitterBlocker, Knob-on-Display, KoD, maxCrypto, maxView, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O, simpleMAP, SimpliPHY, SmartBuffer, SmartHLS, SMART-I.S., storClad, SQI, SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY, Total Endurance, Trusted Time, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY, ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.

The Adaptec logo, Frequency on Demand, Silicon Storage Technology, and Symmcom are registered trademarks of Microchip Technology Inc. in other countries.

GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries.

All other trademarks mentioned herein are property of their respective companies.

© 2008-2022, Microchip Technology Incorporated and its subsidiaries.

All Rights Reserved.

ISBN: 978-1-6683-0176-0

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